At the growth temperature, insb melts to form a layer of melt on top of the substrate. Simulation of epitaxial growth on convex substrate using. A better understanding and accurately modeling of its behavior are vital to the design of fabrication processes and the improvement of the device performance. Analysis of island dynamics in epitaxial growth of thin. Epitaxial growth, magnetic properties, and lattice. The phasefield model is very similar to the levelset method. Photoemission spectroscopy and theoretical calculations are used to investigate the effects of the.
Bergerb department of electrical engineering, university of delaware, newark, delaware 19716 matthew h. Phase field modelling of submonolayer epitaxial growth core. Institute for applied geosciences agw, karlsruhe institute of technology kitkarlsruhe, germany. In this paper, we introduce different forms of mobility into a quantitative phase field model to produce arbitrary ehrlichschwoebel es effects. Phase field crystal pfc model is employed to simulate the process of growth of epitaxial layer on planeconvex substrate with a lattice mismatch and a small inclination angle. Modeling solid phase epitaxial growth for patterned ge. Solidphase epitaxial growth of asiteordered perovskite sr 4 x er x co 4 o 12. Phasefield modeling of microstructure changes in fept. The variation of the systematic free energy, the total atomic number of the epitaxial layer, and the effect of the curvature and the angle of the substrate are analyzed.
Despite continued progress, the modeling and simulation of epitaxial phenomena remain. Pdf phase field modeling of submonolayer epitaxial growth. The requirements of the industry from this process are highly demanding, i. When the capillary length is small, the island size distribution is. This work is concerned with analysis and refinement for a class of island dynamics models for epitaxial growth of crystalline thin films. Surfaceinduced orientation control of cupc molecules for. Kosterlitz4 1supercomputer computations research institute, florida state university, tallahassee, florida 323064052 2department of physics, oakland university, rochester, michigan 483094401 3physics department, rutherford building, mcgill university, 3600 rue. Phase field modeling of submonolayer epitaxial growth.
Channel plate defects are circled in blue while gold islands are circled in red. Phasefield modeling of crystal growth during deformation. The solidphase re growth of doped or alloyed gaas layers by reaction. The twomode phase fieldcrystal pfc method is used to simulate the nanograin growth, including the grain growth in different sets of crystal planes, the grain boundary structure with mismatch, the grain orientation and also the incoherent grain boundary in two dimensional plane. The phasefield method, based on the ginzberglandau theory of phase transitions, is known as a new technology for describing step motions, exploring epitaxial processes and investigating the submonolayer regime of islands. Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with a welldefined orientation with respect to the crystalline substrate. Level set modeling of the orientation dependence of solid. Growth kinetic model for liquid phase electro epitaxial. The relative orientation of the epitaxial layer to the crystalline substrate is defined in terms of the orientation of the crystal lattice of. Stepedge instability during epitaxial growth of graphene from sic0001, v. Consistently, both methods reveal the coexistence of needlelike structures with a 111 contact plane and 001 orientated islandlike crystallites, which are.
Modeling twodimensional solidphase epitaxial regrowth. Solid phase epitaxial growth speg is a common method of achieving high dopant activation for ultra shallow junctions in ge. A phasefield model study of twodimensional dendritic. Theoretical studies of the epitaxial growth of graphene a thesis presented to the academic faculty by fan ming in partial ful llment of the requirements for the degree. The homogeneous deformation is mod eled as vector operator on each lattice. Observing epitaxial growth, structural phases, and. The island density and the island size distribution both show scaling behavior. For epitaxial growth the surface diffusionincorporation time has to be less than one layers deposition time. Molecular beam epitaxy mbe the environment is highly controlled p 1010 torr. We focus on the evolution of morphology on multilayer islands under a certain condition. Various phasefield approximations for epitaxial growth article in journal of crystal growth 266s. An island dynamics model consists of evolution equations for step edges or island boundaries, coupled with a diffusion equation for the adatom density, on an epitaxial surface. Epitaxial growth produces almost defectfree, high quality crystals, which have wide ranges of applications in electronic, optical and. Liquid phase epitaxial growth of ingaas on inp using rare.
Phase field modelling of submonolayer epitaxial growth. Seco, a room temperature ferrimagnetic ptype semiconductor, is demonstrated. Solid phase epitaxial regrowth sper is of great technological importance in semiconductor device fabrication. It is obviously observed that there are dislocation structures in nanograin boundary due to. The growth of stanene on bismuth telluride has been achieved using molecular beam epitaxy. Nominally, this implies a small inplane compressive stress for the fe. In epitaxial growth, crystal surface features such as thin. The initial theories for epitaxial growth, such as 3, relied on an assumption that the system is close to equilibrium.
Epitaxial growth of twodimensional stanene nature materials. Phase field crystal modeling for nanocrystalline growth. Growth of the quaternary transition region followed by the thick uniform composition epilayer can be modeled using the calculated phase diagram at 8001cfig. In this paper, we introduce different forms of mobility into a quantitative phasefield model to produce arbitrary ehrlichschwoebel es effects. Phasefield modeling of epitaxial growth with the ehrlich.
The orientation dependent velocity data are taken from csepregis paper and. For island growth in the multilayer regime, this phase. Phase field modeling of submonolayer epitaxial growth, f. Gaas is an ideal substrate for the epitaxial growth of fe 001 in the stable bcc phase since the lattice parameter of fe is approximately half that of the zincblendetype gaas 2a fea gaas1. The model incorporates orientation dependence of regrowth as found by csepregi et al. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. A twodimensional 2d mass transport, thermal and electric field equation has been solved in the growth solution with appropriate boundary conditions for liquid phase electro epitaxial. The effects of a rotating substrate on surface morphology in oblique incidence epitaxial growth, reu 2007 report by mary elizabeth mills. When the capillary length is small, the island size distribution is consistent with irreversible aggregation kinetics. Xray scattering and diffraction, scanning tunneling microscopy, scanning electron. Thin film growth through for example, molecular beam epitaxy mbe, liquid phase epitaxy lpe and chemical vapor deposition cvd is a modern technology of growing single crystals that inherit atomic structures from a substrate. Liquid phase epitaxial growth of ingaas on inp using rareearthtreated melts wei gaoa and paul r. Phasefield modeling of microstructure changes in fept nanogranular structure and calculation of magnetic property toshiyuki koyama structural metals center, national institute for materials science, tsukuba, ibaraki, 3050047, japan phasefield method has been extended and utilized across many fields in materials. Convergence studies were carried out in the oneside stepflow model, which showed that the original mobility not only induces the es effect, but also leads to larger numerical instability with increase of the step width.
Both the island density and the island size distribution show scaling behavior. The epitaxial growth of selfassembled ternaphthalene. The approach describes the thermodynamics and dynamics of phase transformations through an atomically varying order parameter. Liquid phase epitaxial growth of lattice mismatched insb. This limits the technique to being a low temperature one. Solidphase epitaxial growth of asiteordered perovskite. The phasefield method, reu 2008 report by dante amoroso. The island dynamics model with irreversible aggregation is. One or more evaporated beams of atoms react with the substrate to yield a film. Pdf phasefield modeling of epitaxial growth with the. Phasefield modeling of submonolayer growth with the. The process of silicon epitaxy is essentially a cvd process used for depositing thin films of singlecrystal silicon on single crystal silicon substrate and it is used extensively in the microelectronic and semiconductor industries.
The phase field model is very similar to the levelset method. Atomistic and coarsegrained modeling of epitaxial thin film growth jim evans, iowa state university. We provide an overview of recent progress and the current state of the field. The new layers formed are called the epitaxial film or epitaxial layer. Abstract we report simulations of submonolayer epitaxial growth using a previously proposed continuum phase field model. The field of view is a measure of the diameter of the circular image created by the lowenergy electron microscope. Phase field modeling of multilayer epitaxial growth. Various phasefield approximations for epitaxial growth. Surfaceinduced orientation control of cupc molecules for the epitaxial growth of highly ordered organic crystals on graphene. Realistic multisite multicomponent latticegas modeling. The phase field method, based on the ginzberglandau theory of phase transitions, is known as a new technology for describing step motions, exploring epitaxial processes and investigating the submonolayer regime of islands.
The process is interchangeably known as solid phase epitaxy, solid phase growth and solid phase epitaxial recrystallization. We report simulations of multilayer epitaxial growth using a previously proposed continuum phase. The asite ordered seco film with ptype semiconductivity exhibits anomalous hall effect at room. Molecular dynamics modeling of solid phase epitaxial regrowth. In contrast, solidphase epitaxy of compound semiconductors is a recent discovery. Observing epitaxial growth, structural phases, and structural phase transitions of au on ge 110 using lowenergy electron microscopy abstract. The metho d enables the simulation of warm rolling, a thermo mechanical processing method possessing huge po tan xu phasefield modeling of crystal growth during deformation department of ferrous technology.
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